| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent a pillar pattern from being exposed in a separation process for forming a buried bit line. CONSTITUTION: A plurality of pillar patterns are formed on a substrate(21). A gate insulation layer(27) and a gate electrode to surround the pillar pattern are formed. An impurity region(26) is formed on the substrate between the pillar patterns. A capping layer(29) is formed along the step of the substrate with the gate electrode. An interlayer insulation layer(30A,30B) is formed. A part of the side wall of the capping layer is exposed by etching the interlayer insulation layer partially. A spacer pattern is formed in the side wall of the exposed capping layer. An opening area is formed by etching the remaining interlayer insulation layer using the spacer pattern as the etching barrier layer. The impurity region is separated by etching the capping layer and the substrate using the spacer pattern as the etching barrier layer.
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