| 摘要 |
PURPOSE: An integrated large-area vertical structured group three nitride-based light emitting diode and its methods are provided to reduce time and costs since a isolation process is removed through a trench. CONSTITUTION: An integrated large-area vertical structured group three nitride-based light emitting diode are composed of an n-type ohmic contact electrode structure(910), a light-emitting structure, a functional complex film layer(310), a reflective ohmic contact metal layer(410a), and a diffusion barrier layer(410b), a conductive wafer bonding layers(410c,510c), a heat sink support stand(510a), and a die bonding layer(1100) which are protected by the element passivation layer(700). The functional complex film layer is formed under the light-emitting structure, and the reflective ohmic contact metal layer and diffusion barrier layer are formed under the functional complex film layer. |
