发明名称 RFID device having nonvolatile ferroelectric memory device
摘要 An RFID device is provided to perform a pumping operation when a read or write operation of a memory cell is performed to reduce current consumption. The RFID device includes an analog block, a digital block, and a memory block including at least one ferroelectric capacitor, and a voltage pumping unit for supplying the memory cell a pumping voltage higher than a power voltage only when the memory cell is operated.
申请公布号 US7599233(B2) 申请公布日期 2009.10.06
申请号 US20060646325 申请日期 2006.12.28
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KANG HEE BOK
分类号 G11C7/00 主分类号 G11C7/00
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