发明名称 Heterojunction bipolar transistor and method for making same
摘要 A heterojunction bipolar transistor: The transistor may a collector layer, a base layer and an emitter layer. The transistor may include a dielectric material being disposed over the base layer. The base layer may be a SiGe base layer.
申请公布号 US7598539(B2) 申请公布日期 2009.10.06
申请号 US20070756637 申请日期 2007.06.01
申请人 INFINEON TECHNOLOGIES AG 发明人 WILHELM DETLEF
分类号 H01L29/739;H01L31/0328;H01L31/0336;H01L31/072;H01L31/109 主分类号 H01L29/739
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