| 摘要 |
The present invention relates to high-speed acquisition of both a perpendicular observation image and a tilt observation image, in observation using a scanning electron microscope. An electron-beam observation apparatus includes: a first electro-optical system which scans a converged electron beam from a substantially perpendicular direction to a defect on a target wafer to be observed, and acquires a defect image signal with perpendicular observation by detecting a secondary electron image or a reflected electron image generated from the defect; and a second electro-optical system which scans a converged electron beam from a tilt direction to the defect, and acquires a defect image signal with tilt observation by detecting a secondary electron image or a reflected electron image generated from the defect.
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