发明名称 METHOD FOR FABRICATING MULTI-LAYER USING ANODIZING
摘要 PURPOSE: A multilayer manufacturing method using the anode oxidation is provided to apply the aluminum oxide to the interlayer dielectric layer and to improve the high electrical characteristic of insulation performance. CONSTITUTION: The multilayer manufacturing method using the anode oxidation comprises as follows. The first metal layer is formed in the surface of a substrate(S1). The first circuit has the first part oxidative region and the first metal wirings by oxidizing the first metal layer partially. The interlayer dielectric layer is formed by anodizing extensively the first metal layer and the first part oxidative region(S3). The penetration hole is formed by partially etching the interlayer dielectric layer. The second metal layer is formed within the surface and penetration hole of the interlayer dielectric layer(S5). The second circuit has the second part oxidative region and the second metal wirings.
申请公布号 KR20090104378(A) 申请公布日期 2009.10.06
申请号 KR20080029778 申请日期 2008.03.31
申请人 SUNGKYUNKWAN UNIVERSITY FOUNDATION FOR CORPORATE COLLABORATION 发明人 SUH, SU JEONG;LIM, SEUNG KYU;PARK, IN SOO;NA, SEONG HUN;KIM, JIN SOO;KIM, TAE SUNG;YOUM, KWANG SEOP
分类号 H01L21/28;H01L23/12 主分类号 H01L21/28
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