发明名称 Method of manufacturing an overlay mark
摘要 A method of manufacturing an overlay mark is provided. Two first X-direction isolation structures, two first Y-direction isolation structures, two second X-direction isolation structures, and two second Y-direction isolation structures are formed in a substrate, where the first X-direction isolation structures and the first Y-direction isolation structures are arranged to a first rectangle, and the second X-direction isolation structures and the second Y-direction isolation structures are arranged to a second rectangle. The second rectangle is located in the first rectangle. A first dielectric layer and a conductive layer are formed sequentially on the substrate. A planarization process is performed to remove a portion of the conductive layer till the isolation structures are exposed. A second dielectric layer is formed on the substrate. A rectangle pattern is formed on the second dielectric layer. The sides of the rectangle pattern are located above the isolation structures.
申请公布号 US7598155(B1) 申请公布日期 2009.10.06
申请号 US20080111598 申请日期 2008.04.29
申请人 WINBOND ELECTRONICS CORP. 发明人 CHEN MIN-HUNG;TSAI KAO-TSAIR
分类号 H01L21/78;H01L21/301;H01L21/46 主分类号 H01L21/78
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