发明名称 Electrostatic discharge protection circuits
摘要 An electrostatic discharge (ESD) protection circuit is provided. A transistor is coupled between a node and a ground, and has a gate coupled to the ground. A diode chain is coupled between the node and a pad, and comprises a plurality of first diodes connected in series, wherein the first diode is coupled in a forward conduction direction from the pad to the node. A second diode is coupled between the node and the pad, and the second diode is coupled in a forward conduction direction from the node to the pad.
申请公布号 US7599160(B2) 申请公布日期 2009.10.06
申请号 US20070946011 申请日期 2007.11.27
申请人 VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION 发明人 JOU YEH-NING;LIN GEENG-LIH
分类号 H02H9/00;H02H1/00 主分类号 H02H9/00
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