发明名称 Power semiconductor device
摘要 A power semiconductor device M includes: first and second frames for feeding unipolar power from outside; first and second switching units which are series-connected between the first and second frames; an output frame for outputting AC power which is generated by conduction and shutoff of each switching unit to outside; a connecting wire for electrically connecting at least one pair of the first frame and the first switching unit, the first switching unit and the output frame, the output frame and the second switching unit, and the second switching unit and the second frame; a third frame which is arranged close to the output frame; and a branching wire for electrically connecting the first switching unit or the second switching unit to the third frame, whereby sufficiently suppressing surge voltage which takes place within the module even using an external snubber circuit.
申请公布号 US7599203(B2) 申请公布日期 2009.10.06
申请号 US20070619807 申请日期 2007.01.04
申请人 MITSUBISHI ELECTRIC CORPORATION 发明人 SHIRAKAWA SHINYA;KATO MASAHIRO
分类号 H02M7/5387 主分类号 H02M7/5387
代理机构 代理人
主权项
地址