发明名称 Charged-particle exposure apparatus
摘要 In a particle-beam projection processing apparatus a target (41) is irradiated by means of a beam (pb) of energetic electrically charged particles, using a projection system (103) to image a pattern presented in a pattern definition means (102) onto the target (41) held at position by means of a target stage; no elements-other than the target itself-obstruct the path of the beam after the optical elements of the projection system. In order to reduce contaminations from the target space into the projection system, a protective diaphragm (15) is provided between the projection system and the target stage, having a central aperture surrounding the path of the patterned beam, wherein at least the portions of the diaphragm defining the central aperture are located within a field-free space after the projection system (103).
申请公布号 US7598499(B2) 申请公布日期 2009.10.06
申请号 US20070978661 申请日期 2007.10.30
申请人 IMS NANOFABRICATIONS AG 发明人 PLATZGUMMER ELMAR
分类号 G01K1/08;H01J3/14;H01J3/26 主分类号 G01K1/08
代理机构 代理人
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