发明名称 Semiconductor device in which the emitter resistance is reduced
摘要 A semiconductor device includes a semiconductor chip having a collector region, a base region, and an emitter region that are formed in a semiconductor substrate. The semiconductor chip also includes a base electrode strip in contact with the base region, an emitter electrode strip in contact with the emitter region, an emitter electrode plate disposed above the base electrode strip and the emitter electrode strip, and a base electrode plate disposed adjacent the emitter electrode plate. The device also includes a base terminal external to the semiconductor chip and connected to the base electrode plate and an emitter terminal external to the semiconductor chip and connected to the emitter electrode plate. The base terminal and the emitter terminal are disposed along an edge of the semiconductor chip, and the base electrode strip and the emitter electrode strip are perpendicular to the edge of the semiconductor chip. The base electrode plate may have a protruding portion that engages with a dent formed in the emitter electrode plate.
申请公布号 US7598521(B2) 申请公布日期 2009.10.06
申请号 US20050065344 申请日期 2005.02.25
申请人 SANYO ELECTRIC CO., LTD. 发明人 AKAKI OSAMU
分类号 H01L29/40;H01L27/082;H01L27/102;H01L29/06;H01L29/417;H01L29/423;H01L29/70;H01L29/732;H01L29/739;H01L31/0328;H01L31/0336;H01L31/072;H01L31/109;H01L31/11 主分类号 H01L29/40
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