| 摘要 |
PURPOSE: A plasma processing method and a computer readable storage medium are provided to reinforce etching-resistance of a resistor pattern through a simple and effective resistor reformation. CONSTITUTION: A plasma processing method and a computer readable storage medium are comprised of the steps: preparing a member within a processing container; performing the processing container through an actuator vacuum-exhaustion by a certain pressure; supplying a second process gas to a process space; generating the plasma of the second process gases in a process space by supplying high frequency to a first electrode(60) or a second electrode; and supplying a negative electrode to part which is exposed by the plasma from a place far from the substrate inside the processing container to improve etching resistance of the resistor pattern.
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