Method for fabricating CMOS image sensor

摘要

Provided is a method for fabricating CMOS image sensor. One method includes: preparing a semiconductor substrate in which a photodiode region and a transistor region are defined; sequentially forming an insulating layer and a conductive layer on an entire surface of the semiconductor substrate; forming a photoresist pattern for a gate electrode on the conductive layer; etching the conductive layer to a predetermined thickness using the photoresist pattern as a mask; performing an ion implantation process on the etched conductive layer to form a doped conductive layer; performing an oxidation process on the resultant structure including the doped conductive layer for oxidizing the doped conductive layer so as to form an oxide layer; and removing the oxide layer and the insulating layer disposed thereunder to define a gate electrode and a gate insulating layer.