| 摘要 |
The invention relates to a method of interconnecting electronic components of a first wafer (T1) with electronic components of a second wafer (T2), each wafer comprising metallized vias (1) which pass through the thickness of the wafer. The method comprises the following steps of: Depositing a drop (3) of conducting ink containing solvents and nanoparticles of metal onto each via (1) of the first wafer (T1), stacking the second wafer (T2) on the first in such a way that the vias (1) of the second wafer (T2) are substantially overlaid on the vias (1) of the first wafer (T1). Eliminating 50 to 90% of the solvents contained in the drops (3) by heating or vacuum treatment so as to obtain a pasty ink, sintering the drops (3) of pasty ink by laser so as to produce electrical connections (31) between the overlaid metallized vias (1). |
