| 摘要 |
PURPOSE: A crystallization method of amorphous silicon using a neutralization beam is provided to crystallize on a cheap substrate in lower temperature. CONSTITUTION: A crystallization method of amorphous silicon using a neutralization beam comprises followings. Source gas is supplied to the top of a substrate(S2). A amorphous silicon thin film is deposited by generating H2 plasma using the source gas(S3,S4). The supply of the source and the generation of the plasma are stopped(S5). A catalyst layer is formed on the amorphous silicon thin film using catalytic gas(S6,S7). The neutralization or crystallization plasma is generated(S9). The amorphous silicon thin film is crystallized by converting the plasma into the neutralization beam(S10,S11).
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