METHOD OF INHIBITING BACKGROUND PLATING

摘要

PURPOSE: A method for inhibiting background plating is provided to obtain products which are allowable for marketing by inhibiting undesired background plating. CONSTITUTION: A method for inhibiting background plating comprises the steps of: providing a semiconductor including a dielectric layer containing at least one defect, wherein the dielectric layer coats a space between a conductive bus bar and a conductive pattern for an electric collector line, and conductive pattern of the front side of the semiconductor; contacting at least dielectric layer with at least one oxidizing material, wherein the oxidizing material is selected from oxygen reactants; and selectively depositing the metal layer on the conductive pattern.