Magnetic random access memory array with coupled soft magnetic adjacent layer

摘要

An MTJ element (10) is formed between orthogonal word (20) and bit lines (30). The bit line (30) is a composite line which includes a high conductivity layer (34) and a soft magnetic layer (32) under the high conductivity layer (34). During operation, the soft magnetic layer (32) concentrates the magnetic field of the current and, due to its proximity to the free layer (70), it magnetically couples with the free layer (70) in the MTJ (10). This coupling provides thermal stability to the free layer magnetization and ease of switching and the coupling may be further enhanced by inducing a shape or crystalline anisotropy into the free layer (70) during formation.