发明名称 |
Trench metal oxide semiconductor device and method of manufacturing the same |
摘要 |
<p>Remote contacts (1020) to the polysilicon regions of a trench metal oxide semiconductor (MOS) barrier Schottky (TMBS) device, as well as to the polysilicon regions of a MOS field effect transistor (MOSFET) section and of a TMBS section in a monolithically integrated TMBS and MOSFET (SKYFET) device, are employed. The polysilicon is recessed relative to adjacent mesas. Contact of the source metal to the polysilicon regions of the TMBS section is made through an extension of the polysilicon to outside the active region of the TMBS section. This change in the device architecture relieves the need to remove all of the oxides from both the polysilicon and silicon mesa regions of the TMBS section prior to the contact step. As a consequence, encroachment of contact metal into the sidewalls of the trenches in a TMBS device, or in a SKYFET device, is avoided.
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申请公布号 |
EP1983576(A3) |
申请公布日期 |
2009.09.23 |
申请号 |
EP20080007591 |
申请日期 |
2008.04.18 |
申请人 |
VISHAY-SILICONIX |
发明人 |
PATTANAYAK, DEVA N.;TERRILL, KYLE;SHI, SHARON;LEE, MISHA;BAI, YUMING;LUI, KAM;CHEN, KUO-IN |
分类号 |
H01L29/78;H01L21/329;H01L21/336;H01L29/45;H01L29/872 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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