| 摘要 |
<p>Disclosed is a surface emitting laser including a lower Bragg reflector, a resonator and an upper Bragg reflector. The lower Bragg reflector is provided on top of a semiconductor substrate, and includes a plurality of semiconductor layers. The resonator is provided on top of the lower Bragg reflector and includes an active layer, a lower semiconductor layer and an upper semiconductor layer. The lower semiconductor layer is provided under the active layer, and includes a first insulating layer having an aperture. The upper semiconductor layer is provided on top of the active layer, and includes a second insulating layer having an aperture. The upper Bragg reflector is provided on top of the resonator, and includes a plurality of semiconductor layers. In this surface emitting laser, the uppermost layer among the plurality of semiconductor layers in the lower Bragg reflector forms an air gap, which is larger than the aperture of the first insulating layer, while the lowermost layer among the plurality of semiconductor layers in the upper Bragg reflector forms an air gap, which is larger than the aperture of the second insulating layer.</p> |
