发明名称 |
Well structures for fabricating organic semiconductor devices |
摘要 |
A stepped double bank well structure is formed using first and second insulating layers 800 , 804 which is used for receiving inkjet deposited organic semiconducting material for the manufacture of OTFTs and OLEDs. The first and second bank layers may be photoresist structures which are developed differently or they may comprise insulating materials having different etch removal rates in a single etching step. The upper and lower bank layers may have differing wettability to facilitate the inkjet deposition of organic semiconductors. The stepped double bank well structures may have a positive or negative edge profile to provide overhanging or stepped well configurations.
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申请公布号 |
GB2458454(A) |
申请公布日期 |
2009.09.23 |
申请号 |
GB20080004875 |
申请日期 |
2008.03.14 |
申请人 |
CAMBRIDGE DISPLAY TECHNOLOGY LIMITED;MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD;PANASONIC CORPORATION |
发明人 |
JOHN JAMES GREGORY;BARRY WILD;HIDEHIRO YOSHIDA;KENJI OKUMOTO |
分类号 |
H01L51/56;H01L27/32 |
主分类号 |
H01L51/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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