发明名称 METHOD AND SYSTEM OF LOW VOLTAGE PROGRAMMING OF NON-VOLATILE MEMORY CELLS
摘要 <p>A low voltage method and system of programming a selected non-volatile memory cell in a memory array having a gate node coupled to a wordline WL(n) and a drain node connected to a selected bitline by injecting hot carriers from a drain region of an injecting memory cell having a gate node coupled to a next neighbor wordline WL(n-1) into a floating gate of the selected non-volatile memory cell on the wordline WL(n).</p>
申请公布号 EP2102868(A2) 申请公布日期 2009.09.23
申请号 EP20070865657 申请日期 2007.12.13
申请人 SANDISK CORPORATION 发明人 LEE, DANA;LUTZE, JEFFREY
分类号 G11C16/04;G11C16/10;G11C16/34 主分类号 G11C16/04
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