发明名称 |
METHOD AND SYSTEM OF LOW VOLTAGE PROGRAMMING OF NON-VOLATILE MEMORY CELLS |
摘要 |
<p>A low voltage method and system of programming a selected non-volatile memory cell in a memory array having a gate node coupled to a wordline WL(n) and a drain node connected to a selected bitline by injecting hot carriers from a drain region of an injecting memory cell having a gate node coupled to a next neighbor wordline WL(n-1) into a floating gate of the selected non-volatile memory cell on the wordline WL(n).</p> |
申请公布号 |
EP2102868(A2) |
申请公布日期 |
2009.09.23 |
申请号 |
EP20070865657 |
申请日期 |
2007.12.13 |
申请人 |
SANDISK CORPORATION |
发明人 |
LEE, DANA;LUTZE, JEFFREY |
分类号 |
G11C16/04;G11C16/10;G11C16/34 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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