| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to increase production yield of a device by performing selective ion implantation and controlling the thickness of an insulation layer. CONSTITUTION: A method for manufacturing a semiconductor device is comprised of the steps: a fuse pattern(210) is formed on a semiconductor substrate(200); a first insulating layer(220) is formed on the whole surface; an impurity is injected into a fuse blowing area(270) placed on the fuse pattern through ion-implantation; and the first insulating layers are exposed to the fuse blowing area by repair-etching the second insulating layers.
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