| 摘要 |
<p>PURPOSE: A non volatile memory device with pick up is provided to suppress source bouncing and bias drop by supplying a source bias to a second and a third metal layer from a multi level structure of metal wiring layer. CONSTITUTION: A non volatile memory device with pick up is composed of a well pick-up group and a source pick-up group(22). The well pick-up group is equipped within the cell array region per the input-output bound part, and the well pick-up group includes the line consisting of a single level metal wiring layer. In the cell array region, the source pick-up group is the multi level metal wiring layer.</p> |
