高压平面式P–N接合型半导体装置,申请号TW016586-传众专利搜索

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发明名称	高压平面式P–N接合型半导体装置
摘要
申请公布号	TW009804	申请公布日期	1971.11.01
申请号	TW016586	申请日期	1970.05.25
申请人	松下电子工业株式会社;松下电器产业株式会社	发明人	江崎豪弥;直本进;金子忠敬
分类号	H01L	主分类号	H01L
代理机构		代理人	林敏生台北巿南京东路二段一二五号七楼伟成第一大楼
主权项
地址	荷兰爱尔荷芬巿以马内利街29号

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