| 摘要 |
PURPOSE: A nitride semiconductor layered structure and an optical semiconductor device, and a manufacturing method thereof are provided to perform a p-type nitride semiconductor layer having high crystalline and low resistivity. CONSTITUTION: A nitride semiconductor layered structure includes a substrate(11), a first p-type nitride semiconductor layer(12), and a second p-type nitride semiconductor layer(13). The first p-type nitride semiconductor layer is formed on the substrate by using organic metal compound and p-type dopant source as group III source, and by using NH3 as group V source. Hydrogen concentration of the first p-type nitride semiconductor layer is less than 1×1019cm-3. The second p-type nitride semiconductor layer is formed on the first p-type nitride semiconductor layer by using organic metal compound and p-type dopant source as group III source, and by using ammonia and hydrazine derivative as group V source. Carbon concentration of the second p-type nitride semiconductor layer is less than 1×1018cm-3.
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