| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to perform a flowing process easily by etching a hard mask to be an unevenness support pattern of and forming a photosensitive pattern. CONSTITUTION: A method for manufacturing a semiconductor device is comprised of the steps: a conductive wiring material layer and a hard mask layer are formed on a semiconductor substrate(300); a support pattern(360) of the unevenness shape is formed by etching the hard mask layer; a photosensitive pattern(370) defining a conductive wiring in the whole surface including the support pattern is formed; and the conductive wiring is formed by etching the conductive wiring material layer using a support pattern as a mask after the photosensitive pattern is removed.</p> |
