| 摘要 |
<p>PURPOSE: A nonvolatile semiconductor memory is provided to prevent the leakage current in the low filed even though a thin EOT is formed. CONSTITUTION: The nonvolatile semiconductor memory includes the memory device. The memory device includes the semiconductor substrate(1), the source(2a) and drain region(2b), the first insulating layers, the accumulation layer of electric charge(4), the second insulating layers, and the control gate electrode(6). The source and drain region are separated from the semiconductor substrate. The first insulating layers are formed on the semiconductor substrate between the drain region and the source. The first insulating layers have the electron capture site and the discharging site. The accumulation layer of electric charge is formed on the first insulating layers. The second insulating layers are formed on the accumulation layer of electric charge. The control gate electrode is formed on the second insulating layers.</p> |
