| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to prevent damage to an insulating film by securing an overlay margin. CONSTITUTION: A method for fabricating a semiconductor device is comprised of the steps: a metal electrode(12A) and a hard mask(12B) are laminated on the substrate(11) and the laminated pattern(12) is formed; a first insulating layer(14) with the thickness lower than the metal electrode between the patterns is formed; a protective film(15) having the first insulating layers and a selection ratio along the step height of the whole structure including the pattern; a second insulating layers are formed on the protective film; and a photosensitive pattern opening a partial domain of the pattern on the second insulating layers is formed.
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