发明名称 |
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE |
摘要 |
<p>Method of manufacturing a semiconductor device, in which on a region of silicon oxide (5) situated next to a region of monocrystalline silicon (4) at the surface (3) of a semiconductor body (1), a non-monocrystalline auxiliary layer (8) is formed. The auxiliary layer is formed in two steps. In the first step, the silicon body is heated in an atmosphere comprising a gaseous arsenic compound; in the second step it is heated in an atmosphere comprising a gaseous silicon compound instead of said arsenic compound. Thus, the regions of silicon oxide are provided with an amorphous or polycrystalline silicon seed layer in a self-aligned manner.</p> |
申请公布号 |
EP1579487(B1) |
申请公布日期 |
2009.09.23 |
申请号 |
EP20030813689 |
申请日期 |
2003.12.16 |
申请人 |
NXP B.V.;IMEC |
发明人 |
MAGNEE, PETRUS, H., C.;DONKERS, JOHANNES, J., T., M.;SHI, XIAOPING |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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