SEMICONDUCTOR DEVICE HAVING SINGLE-ENDED SENSING AMPLIFIER

摘要

A semiconductor device having a single-ended sense amplifier is provided to improve the manufacturing efficiency about a memory of using a plurality of sense amplifiers by increasing the tolerance range of deviation in the manufacturing process of a MOS transistor. A semiconductor device having a single-ended sense amplifier comprises a first field effect transistor, a second field effect transistor supplying the output signal of the first field effect transistor to a global bit-line, and a global bit-line voltage decision circuit. A control circuit controls the read timing of the transition timing of the second field effect transistor or the read timing of the global sense amplifier based on the output signal of the delay circuit including the replica of the first field effect transistor and replica of the global bit-line voltage decision circuit.