| 摘要 |
A method for forming a semiconductor device is provided to prevent an SAC(Self-Aligned Contact) fail between a gate and a landing plug by forming a spacer nitride layer through the anisotropic etching after forming the nitride layer on a gate of a dummy cell region. An element isolation layer(220) defining an active region(210) is formed on a semiconductor substrate(200) with a cell region and a dummy cell region. A gate is formed on the whole surface. An interlayer insulating layer(240) is formed on the whole surface including the gate. A landing plug contact(250) is formed by etching the interlayer insulating layer. A photosensitive pattern exposing the dummy cell region is formed. The nitride layer is formed on the whole surface including the photosensitive pattern.
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