MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING SPACER PATTERNING TECHNOLOGY

摘要

A method for forming a semiconductor device is provided to perform a spacer patterning process without a pattern failure by forming a pad mask pattern in the upper part after coating a spin on carbon layer and a multifunctional mask layer on the spacer pattern. A first mask layer(112) and a second mask layer(114) are deposited in the upper part of the etched layer of a semiconductor substrate(110). A first photoresist pattern is formed by a lithography process in the upper part of the second mask layer. A second mask pattern is formed by patterning the second mask layer using the first photoresist pattern. The spacer is formed in the sidewall of the second mask pattern. A spacer pattern(132') is formed by removing the second mask pattern. A second photoresist pattern to expose the spacer pattern end is formed in the front surface including the spacer pattern.