发明名称 THIN FILM TRANSISTOR SUBSTRATE AND REPAIRING METHOD OF THE SAME
摘要 A thin film transistor substrate and a repairing method thereof are provided to prevent additional weight from being reduced or added due to overlapping of a repair pattern and a gate line, thereby preventing delay and image quality of a gate signal from being lowered. A thin film transistor substrate comprises a plurality of gate lines, a plurality of data lines, a pixel electrode(180) and a repair electrode(185). The plurality of gate lines is extended in one direction. The data lines are insulated from the gate line and extended in the other direction. The pixel electrode is formed in an area in which the gate line and the data line cross each other. A repair pattern is separated from the pixel electrode so that a part of the repair pattern is overlapped with a leading end of the gate line.
申请公布号 KR20090099281(A) 申请公布日期 2009.09.22
申请号 KR20080024434 申请日期 2008.03.17
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, YONG EUN
分类号 G02F1/136;G02F1/1345 主分类号 G02F1/136
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