MEMORY DEVICE HAVING PRE AMP

摘要

A memory device having a pre-amplifier is provided to increase the writing speed without an additional amplifier by using a pre-amplifier for the reading operation. A memory cell array(110) consists plural memory cells, and a bit-line detection amplifier(120) is connected to the memory cell through a true bit line. The bit line detection amplifier is connected to a row selection gate(130) through the one pair of compensative global input/output lines, and the row selection gate is connected to the bit line detection amplifier through the compensative bit lines and to a pre-amplifier(140) through a pair of compensative local input/output lines. A control logic(160) controls the operation of a memory device(100), and is connected to a program circuit(170).