| 摘要 |
A semiconductor device includes a MIS transistor. The device includes a buried insulating film formed in one part of a substrate, the buried insulating film being elongated in a gate-width direction and shortened in a gate-length direction of the MIS transistor. A first semiconductor layer is formed on the buried insulating film and has uniaxial lattice strain. A second semiconductor layer covers both sides of the buried insulating film and both sides of the first semiconductor layer, the sides being opposite in the gate-length direction. A gate electrode is formed on the first semiconductor layer with a gate insulating film being formed between the gate electrode and the first semiconductor layer. A source region and a drain region are formed in the second semiconductor layer.
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