发明名称 SUBSTRATE PROCESSING DEVICE
摘要 A substrate processing apparatus is provided to suppress a product cost of a heater by simplifying a structure in comparison with the substrate processing apparatus using a gas pipe. A process chamber(11) performs the processing using a plurality of gases on a substrate to be processed. A gas inputting unit(12) is prepared in the process chamber and inputs the plurality of gases to the process chamber. A plurality of gas flow channels are arranged in the process chamber and induce the plurality of gases from the gas supply unit to the gas inputting unit. An entrance block(13) includes a heater(23) heating the gas. The gas flow channel is prepared in a height direction of the entrance block with the multilayer. A loading side loading the entrance block of the process chamber is flat.
申请公布号 KR20090099478(A) 申请公布日期 2009.09.22
申请号 KR20090022042 申请日期 2009.03.16
申请人 TOKYO ELECTRON LIMITED 发明人 EINOSUKE TSUDA
分类号 H01L21/205;H01L21/02;H01L21/31 主分类号 H01L21/205
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