发明名称 |
ELEMENT WAFER AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
A device wafer and a method for manufacturing the same are provided to prevent a crack from being generated to the inside of a region with a device by forming a plurality of openings and a concave part to surround the region with the device. A plurality of layers are laminated in a semiconductor wafer(21). A first insulating layer(22), a wire(26), and a second insulating layer(27) are laminated on the semiconductor wafer. The device is formed in the central region of the semiconductor wafer. The concave part surrounds the region to form the device on the semiconductor wafer. The plurality of openings surround the region in parallel around the region. The plurality of films include at least one sacrificial layer. |
申请公布号 |
KR20090099445(A) |
申请公布日期 |
2009.09.22 |
申请号 |
KR20080098044 |
申请日期 |
2008.10.07 |
申请人 |
MITSUBISHI ELECTRIC CORPORATION |
发明人 |
OKUMURA MIKA;HORIKAWA MAKIO;SATOU KIMITOSHI;YAMAGUCHI YASUO |
分类号 |
H01L21/316;H01L21/3205;H01L21/60;H01L23/48 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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