发明名称 |
Method and device of measuring interface trap density in semiconductor device |
摘要 |
A method is provided for measuring interface trap density in a semiconductor device. In the method, measurement parameters are input to a host computer. A pulse condition is set at a pulse generator using the measurement parameters. A pulse of a predetermined frequency generated by the pulse generator is applied to a gate of a transistor, and a charge pumping current is measured from a bulk of the transistor. A charge pumping current measurement may be repeated for a plurality of frequencies while changing the frequency until a set frequency is reached. A pure charge pumping current is calculated for each frequency where a gate tunneling leakage current is removed from the charge pumping current measured for each frequency. Interface trap density is calculated from the calculated pure charge pumping current for each frequency.
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申请公布号 |
US7592828(B2) |
申请公布日期 |
2009.09.22 |
申请号 |
US20060646806 |
申请日期 |
2006.12.27 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
SONG JONG KYU |
分类号 |
G01R31/28;G06F19/00;H01L21/66 |
主分类号 |
G01R31/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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