MEMORY DEVICE AND MEMORY DATA READ METHOD

摘要

A memory device and a memory data read method are provided to improve the reading performance by lowering the requirement condition needed for error control codes. A memory device(100) comprises a multi bit cell array(110), a threshold voltage detection unit(120), a decision unit(130) and a error detection unit(140). The multi bit cell array comprises a plurality of multi bit cells. The threshold voltage detection unit detects a first threshold voltage sections including the threshold voltages of the multi bit cells of the inside of sub array. The decision unit determines data of the first bit layer from the detected first threshold voltage sections as described above. The first threshold voltage which the decision device is discriminated about the multi bit cell of the inside of subarray. The decision unit determines the data of the first bit layer using the first threshold voltage section. The error detection unit detects the erroneous bit of data of the determined first bit layer.