发明名称 Charge balance techniques for power devices
摘要 A charge balance semiconductor power device includes an active area comprising a plurality of cells capable of conducting current when biased in a conducting state. A non-active perimeter region surrounds the active area, wherein no current flows through the non-active perimeter when the plurality of cells is biased in a conducting state. Alternately arranged strips of p pillars and strips of n pillars extend through both the active area and the non-active perimeter region along a length of a die housing the semiconductor power device.
申请公布号 US7592668(B2) 申请公布日期 2009.09.22
申请号 US20060396239 申请日期 2006.03.30
申请人 FAIRCHILD SEMICONDUCTOR CORPORATION 发明人 KOCON CHRISTOPHER BOGUSLAW
分类号 H01L29/94 主分类号 H01L29/94
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