发明名称 |
Method of manufacturing semiconductor device |
摘要 |
A method of manufacturing a semiconductor device. In this method, a concave portion is formed in one surface in the thickness direction of a primary base plate comprising a semiconductor substrate with a relatively large thickness dimension. Then, through-holes are formed by a reactive-ion etching process using as a mask an opening formed in an oxide film provided on the other surface in the thickness direction of the primary base plate. The opening has a narrow width in a region corresponding to the concave portion and a wide width in the remaining region. Thus, respective times necessary for the wide-width through-hole to penetrate through the primary base plate and necessary for the narrow-width through-hole to reach a bottom surface of the concave portion can be approximately equalized to complete the common etching process of the wide-width through-hole and the narrow-width through-hole approximately simultaneously.
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申请公布号 |
US7592263(B2) |
申请公布日期 |
2009.09.22 |
申请号 |
US20050598372 |
申请日期 |
2005.03.15 |
申请人 |
PANASONIC ELECTRIC WORKS CO., LTD. |
发明人 |
GOUDA KAZUO;TSUJI KOJI;KIRIHARA MASAO;NISHIJIMA YOUICHI |
分类号 |
B81C1/00;H01L21/302;B81B1/00 |
主分类号 |
B81C1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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