发明名称 |
Thyristor-based semiconductor device with indium-carbon implant and method of fabrication |
摘要 |
A thyristor-based memory device may comprise two base regions of opposite type conductivity formed between a cathode-emitter region and an anode-emitter region. A junction defined between the p-base region and the cathode-emitter region of the thyristor may be "treated" with a high ionization energy acceptor such as indium in combination with carbon as an activation assist species. These two implants may form complexes that may extend across the junction region.
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申请公布号 |
US7592642(B1) |
申请公布日期 |
2009.09.22 |
申请号 |
US20060398398 |
申请日期 |
2006.04.04 |
申请人 |
T-RAM SEMICONDUCTOR, INC. |
发明人 |
BANNA SRINIVASA R.;PLUMMER JAMES D. |
分类号 |
H01L29/72 |
主分类号 |
H01L29/72 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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