| 摘要 |
The method includes providing a patterned structure in a process chamber, where the patterned structure contains a micro-feature formed in a dielectric material and a contact layer at the bottom of the micro-feature, and depositing a metal carbonitride or metal carbide film on the patterned structure, including in the micro-feature and on the contact layer. The method further includes forming an oxidation-resistant diffusion barrier by increasing the nitrogen-content of the deposited metal carbonitride or metal carbide film, depositing a Ru film on the oxidation-resistant diffusion barrier, and forming bulk Cu metal in the micro-feature. A semiconductor contact structure is described.
|
