IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME

摘要

An image sensor and a manufacturing method thereof are provided to reduce loss of a light due to reflection of a surface by forming minute light transmitting bodies of a pyramid shape on a micro lens surface of a convex shape. A semiconductor substrate(101) has a plurality of pixel regions. A photoelectric conversion device(110) is formed inside the semiconductor substrate of each pixel region. An interlayer insulation film(240) of multilayer includes wiring layers(232,234) connected to the photoelectric conversion device. A color filter(270) is formed on the interlayer insulation film, and corresponds to the photoelectric conversion device. A plurality of minute light transmitting bodies(300) is formed with a pyramid shape, and transmits a light from outside. A plurality of minute light transmitting bodies is made of light-transmitting photoresist or insulation material.