| 摘要 |
A semiconductor device includes a substrate, a semiconductor element formed on the substrate, and a wiring connection testing structure which is formed on the substrate and which includes an electron beam irradiation area where an electron beam is irradiated so that a wiring connection is tested. The wiring connection testing structure includes an insulation layer formed on the substrate, a plurality of first pattern wirings which are formed on the insulation layer in parallel and which include the electron beam irradiation area, a second pattern wiring formed between the first pattern wirings, a third pattern wiring which is formed on a lower layer of the second pattern wiring and which is connected to the second pattern wiring, and a fourth pattern wiring which is formed on an upper layer of the third pattern wiring, is connected to the third pattern wiring, and has the electron beam irradiation area.
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