| 摘要 |
<p>An exposure mask and a method for forming a semiconductor device using the same are provided to improve process margin using an auxiliary pattern for reducing a mask error when forming a slit contact. A short pattern(10) is parallel to a short axis of a slit contact hole pattern(H) to surround the slit contact hole pattern. A long pattern(20) is connected to one end of the short pattern and is parallel to a long axis(L2) of the slit contact hole pattern. The width of the short pattern is 0.1 to 0.35 times wider than the wavelength of the exposure source. The width of the long pattern is 0.1 to 0.2 times wider than the wavelength of the exposure source. The exposure source is one of I-line, KrF, ArF and EUV. The exposure source uses one of the normal illuminator and the changed illuminator. The slit contact hole pattern forms the drain contact and the metal contact at the same time.</p> |
