| 摘要 |
<p>A method for forming a semiconductor device is provided to prevent leaning of a pillar pattern by supporting the pillar pattern of both sides by a buried bit line. A buried bit line is formed on a semiconductor substrate(200). A pillar pattern(220) is formed by etching the semiconductor substrate. A gate insulation film(230) is formed between the pillar patterns. A gate-reserved region is formed by etching the gate insulation film. A bulb type gate-reserved region is formed by isotropically etching a bottom part of the gate-reserved region. A gate polysilicon layer(270) is buried in the bulb type gate-reserved region.</p> |
