| 摘要 |
PROBLEM TO BE SOLVED: To provide an epitaxial wafer containing a gettering layer having a high gettering ability without giving a bad influence to a device active layer even when formed near the device active layer and a method of manufacturing the same. SOLUTION: On a silicon substrate 20 (Fig. 1(a)) or on a silicon epitaxial base film 30 (Fig. 1(b)) formed as necessary, the gettering epitaxial film 40 (Fig. 1(c)) containing carbon and oxygen is formed, and the main silicon epitaxial film 60 (Fig. 1(e)) which becomes the device active layer is formed on the gettering epitaxial film 40 or on a capping silicon film 50 (Fig. 1(d)) formed as necessary. COPYRIGHT: (C)2009,JPO&INPIT
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