| 摘要 |
PROBLEM TO BE SOLVED: To apply a sufficient stress to a channel region to materialize an embedded S/D (source-drain) region by an epitaxial growth having no shape abnormality. SOLUTION: This method for manufacturing a semiconductor apparatus includes: a step (a) of forming a device forming region by a device isolation region 104 on a silicon substrate 101; a step (b) of forming a gate electrode 103P and a sidewall 107P coating a side face of the gate electrode inside the device forming region; a step (c) of removing a partial upper part of the silicon substrate between the gate electrode and the device isolation region by isotropic etching to form an opening 112B; a step (d) of removing a part of the silicon substrate on the lower side of the opening 112B by anisotropic etching to form a trench 112C connected to the opening 112B; and a step (e) of forming an epitaxial layer 113 in the trench 112C and the opening 112B. The epitaxial layer 113 is made of a material which applies a stress to the channel region. COPYRIGHT: (C)2009,JPO&INPIT
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