PLASMA ETCHING METHOD, PLASMA ETCHING APPARATUS, CONTROL PROGRAM AND COMPUTER READABLE STORAGE MEDIUM

摘要

PROBLEM TO BE SOLVED: To provide a plasma etching method realizing more accurate size and form control in plasma etching than ever and obtaining an etched pattern of desired size and form. SOLUTION: An underlayer resist 103 is plasma-etched using a patterned SOG film 104 as a mask to form an opening 112. In the plasma-etching step, a mixed gas containing an oxygen-containing gas and a sulfur-containing and oxygen-not-containing gas is used as a processing gas (an etching gas). COPYRIGHT: (C)2009,JPO&INPIT